PRODUCTS

LIVAR M506

GATED SWIR CAMERA SYSTEM

The LIVAR® M506 Gated SWIR Camera System is ideal for covert operations and target identification, supporting lasers from 1.0–1.6 μm. Cost-effective, compact and lightweight, this range‐gated imaging camera operates in the eye-safe SWIR band with day and night coverage. It includes HVPS and TECC. Optional high-PRF versions allow low-power, high-PRF diode lasers in accumulation mode. In conjunction with a range detector, it optimizes imaging for target range. Available in active master, active slave, or passive modes.

The system offers system integrators an advanced long-range surveillance camera at a low cost.

Working with a range detector, the system sets the range gate for the target location to provide optimized digital images.

Apache M611-02

VISNIR LOW-LIGHT CMOS CAMERAS

The Apache camera incorporates EVS's proprietary ISIE11 Electron Bombarded Active Pixel Sensor (EBAPS®). Designed for a variety of nighttime and extreme low light imaging conditions, the sensor enables the camera to provide clear imagery from extreme darkness through the twilight transition period. The camera was specifically designed for the U.S. Army's Apache Arrowhead Modernized Target Acquisition Designation Sight/Pilot Night Vision Sensor (M-TADS/PNVS) Program. EVS is the prime contractor for the program's PNVS digital image intensifier.

In addition to the ISIE11, the Apache camera integrates a high voltage power supply (HVPS), temperature sensor, FLASH memory for image correcting parameters and support electronics. The camera's optical window transfers input to the sensor from the external lens. The optical image is focused onto the photocathode and the resulting photoelectrons are accelerated across a vacuum gap and proximity-focused on the back-illuminated CMOS anode.

Gain is achieved by the electron multiplication that results when the high-velocity electrons dissipate their energy in the silicon chip, which creates electron-hole pairs in the back surface of the CMOS Focal Plane Array (FPA). The pixels are read out, sampled and converted to 10-bit LVTTL digital data inside the camera. The pixel data is framed and sent to the digital video bus for output from the camera in the form of a high speed serial interface.

NightVista® M611-05

LOW-LIGHT LEVEL CAMERA

The NightVista® M611-05 camera incorporates EVS's ISIE11 Electron Bombarded Active Pixel Sensor (EBAPS®) for extreme low light sensitivity. The camera offers a 1600 x 1200 pixel UXGA resolution with a 60 Hz frame rate and can be configured for either rolling or snapshot shutter at the factory.

The M611-05 camera integrates a high voltage power supply (HVPS), temperature sensor, and flash memory to store image correcting parameters, as well as additional supporting electronics. The photons from the scene are focused onto the photocathode and the resulting photoelectrons are accelerated across a vacuum gap and proximity focused on the back-illuminated CMOS anode to produce digital image intensified (DI2) video with very low noise.

With EVS's patented low halo technology and automatic gain control (AGC), the NightVista® M611-05 is highly effective operating in extreme low light conditions and in limited day mode without the customary halo associated with analog night vision devices.

NightVista® M619

LOW-LIGHT LEVEL CAMERA

The NightVista® M619 camera represents the next generation in EVS's industry-leading digital low-light EBAPS® sensor technology. Incorporating EVS's proprietary ISIE19 Electron Bombarded Active Pixel Sensor (EBAPS) for extreme low light sensitivity, the camera offers a 1920 × 1920 pixel resolution at 160 Hz frame rate, and can operate in either rolling shutter or pseudo-snapshot mode.

With ISIE19 sensor capabilities and EVS-proprietary image-processing algorithms, the M619 provides enhanced visual acuity for today's warfighter systems. Features of the ISIE19 sensor — including high bit depths for increased linear dynamic range, equivalent background noise at a higher operating temperature than that of Gen-III technology, and patented zero-halo technology — deliver high-quality imagery in even the most extreme low light conditions. The camera's high frame rate minimizes the blur and image lag typically observed in dynamic imaging environments with lower frame-rate digital cameras. Its digital output offers unmatched flexibility for data sharing and providing input to augmented reality systems.

A camera core that includes the ISIE19 sensor on a headboard and a high-voltage power supply is also available. Contact the factory for details.

MicroVista® M716

VISNIR LOW-LIGHT CMOS CAMERAS

MicroVista® M716 cameras represent EVS's next-generation high-performance CMOS sensor technology. With high sensitivity in the visible (Vis) and near-infrared (NIR) bands, and with NIR enhancement that extends the spectral range to 1060 nm, the back-illuminated CMOS sensor supports up to a 1280 x 1280 image format with 9.117 μm square pixels at up to 120 frames per second (fps). With excellent sensor full-well capacity (>100 dB) and low noise (2.6 e-), combined with its 16-bit maximum pixel depth, M716 cameras deliver outstanding intra-scene dynamic range. The cameras include a local tone mapping (LTM) algorithm to improve low light region visibility in high dynamic range scenes.

The M716 camera line includes the following configurations, all with the same CMOS imager:

• M716-01: MIPI Camera with a fixed lens, 65° H x 40° V FoV, 1280 x 840 image format, maximum 90 fps, ICD documentation available for integration
• M716-02: MIPI Camera with a C-Mount lens receptacle, 1280 x 1280 image format, maximum 120 fps, ICD documentation available for integration
• M716-03: USB-C Camera with a C-Mount lens receptacle, 1280 x 1280 image format, maximum 90 fps, GUI software (MS Windows based)

The M716-01 and M716-02 cameras are ideal for integration into multi-sensor suites, EO payloads, or other applications requiring VisNIR imaging capabilities. Exceptional performance, small form factor, and low power consumption make the M716 cameras ideal for a broad range of applications.

ISIE11 Camera Module

The ISIE11 Camera Module incorporates EVS's proprietary ISIE11 Electron Bombarded Active Pixel Sensor (EBAPS®) for extreme low-light imaging down to overcast starlight conditions, with an image format of 1600 x 1200 pixels and a pixel size of 10.8 μm square. The module includes the ISIE11 sensor on a headboard, a high voltage power supply (HVPS), a processor board, and the required connections between them. This unpackaged configuration makes the ISIE11 Camera Module ideal for integration into a variety of platforms such as helmets, UXV payloads, and surveillance cameras.

The ISIE11 sensor incorporates a high quantum efficiency (QE) gallium arsenide (GaAs) photocathode with responsivity between 400 – 900 nm (visible through NIR) and a backside illuminated (BSI) CMOS anode capable of up to 60 frames per second (fps) with a 10-bit extended dynamic range (XDR) digital video output, capable of windowing to provide a subset of pixels at a higher frame rate. Low light sensitivity is achieved in the sensor when the HVPS applies a high voltage across a vacuum gap between the photocathode and the CMOS anode, accelerating electrons across the gap and creating electron-hole pairs in the backside of the anode, resulting in high gain with very low noise. The sensor incorporates EVS's proprietary low halo technology and runs in snapshot shutter mode.

The processor board further enhances the acquired imagery by applying bad pixel replacement (BPR), non-uniformity correction (NUC), XDR linearization, and contrast enhancement (CE). An Interface Control Document (ICD) for the power, control, and data interfaces is available for integrators per ITAR restrictions.

ISIE19 Sensor Module

The ISIE19 Sensor Module incorporates EVS's proprietary ISIE19 Electron Bombarded Active Pixel Sensor (EBAPS®) for extreme low-light imaging down to overcast starlight conditions, with an image format of 1920 x 1920 pixels and a pixel size of 9.117 μm square. The module includes the ISIE19 sensor on a headboard and a high voltage power supply (HVPS) capable of driving one or two sensors (contact the factory if a two-sensor configuration is desired). This unpackaged configuration makes the ISIE19 Sensor Module ideal for integration into a variety of platforms such as helmets, UXV payloads, and surveillance cameras.

The ISIE19 sensor incorporates a high quantum efficiency (QE) gallium arsenide (GaAs) photocathode with responsivity between 400 – 900 nm (visible through NIR) and a backside illuminated (BSI) CMOS anode capable of up to 155 frames per second (fps) full frame with a 16-bit digital video output, capable of windowing to provide a subset of pixels at a higher frame rate. The sensor is designed around a novel pixel architecture that achieves up to 100 dB dynamic range. Low light sensitivity is achieved in the sensor when the HVPS applies a high voltage across a vacuum gap between the photocathode and the CMOS anode, accelerating electrons across the gap and creating electron-hole pairs in the backside of the anode, resulting in high gain with very low noise. The sensor incorporates EVS's proprietary low halo technology and runs in rolling or pseudo-snapshot shutter mode.

An Interface Control Document (ICD) for the power, control, and data interfaces is available for integrators per ITAR restrictions.